THE GROWTH OF SI ON SI(100) - A VIDEO-LEEM STUDY

被引：32

作者：

SWIECH, W ^{[1
]}

BAUER, E ^{[1
]}

机构：

[1] WROCLAW B BEIRUT UNIV,INST PHYS,PL-50205 WROCLAW,POLAND

来源：

SURFACE SCIENCE | 1991年 / 255卷 / 03期

关键词：

D O I：

10.1016/0039-6028(91)90678-L

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of Si on Si(100) surfaces is studied in situ in real time by low-energy electron microscopy on surface regions with large step spacings and different step configurations at low supersaturations. In all cases the S(A) steps are found to be prominent. The approximate equilibrium shape of two-dimensional Si islands is determined. No evidence for formation of alternating (2 x 1) and (1 x 2) regions on large flat terraces is found.

引用

页码：219 / 228

页数：10

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