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EXPERIMENTAL DETERMINATION OF INJECTED CARRIER RECOMBINATION RATES AT DISLOCATIONS IN SEMICONDUCTORS

被引：27
作者：
MCKELVEY, JP
机构：
来源：
PHYSICAL REVIEW | 1957年 / 106卷 / 05期
关键词：
D O I：
10.1103/PhysRev.106.910
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：910 / 917
页数：8
相关论文
共 12 条
[1]  
DRESSELHAUS, 1955, PHYS REV, V98, P368
[2]  
FAUST JW, COMMUNICATION
[3]  
GOLDBERG, 1957, PHYS REV, V105, P865
[4]   THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J].
HAYNES, JR ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1951, 81 (05) :835-843
[5]   VOLUME AND SURFACE RECOMBINATION RATES FOR INJECTED CARRIERS IN GERMANIUM [J].
MCKELVEY, JP ;
LONGINI, RL .
JOURNAL OF APPLIED PHYSICS, 1954, 25 (05) :634-641
[6]   DIFFUSION EFFECTS IN DRIFT MOBILITY MEASUREMENTS IN SEMICONDUCTORS [J].
MCKELVEY, JP .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (04) :341-343
[7]   RECOMBINATION OF INJECTED CARRIERS AT DISLOCATION EDGES IN SEMICONDUCTORS [J].
MCKELVEY, JP ;
LONGINI, RL .
PHYSICAL REVIEW, 1955, 99 (04) :1227-1232
[8]  
Shockley W, 1950, ELECT HOLES SEMICOND, P293
[9]   THE TRANSPORT OF ADDED CURRENT CARRIERS IN A HOMOGENEOUS SEMICONDUCTOR [J].
VANROOSBROECK, W .
PHYSICAL REVIEW, 1953, 91 (02) :282-289
[10]  
VOGEL, 1954, PHYS REV, V94, P1791
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