TRANSMISSION ELECTRON-MICROSCOPE OBSERVATIONS OF DAMAGE IN INP INDUCED DURING HANDLING

被引：5

作者：

COMER, JJ

机构：

[1] Solid State Sciences Division, RADC, Hanscom Air Force Base

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 09期

关键词：

D O I：

10.1063/1.326706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Damage observed in InP specimens following thinning and mounting in a specimen holder for transmission electron microscopy consisted of two kinds. In one case microcracks were observed in {110} cleavage planes. These contained edge dislocations with Burgers vectors of the type b= (a/2) 〈110〉. A second kind consisted of dislocation clusters which gave rise to slip and stacking-fault formation during examination in the microscope. The results suggest that extreme care is essential in handling this material during device processing.

引用

收藏

页码：6003 / 6005

页数：3

相关论文

共 8 条

[1] ON A NEW MODE OF DEFORMATION IN INDIUM ANTIMONIDE [J].

ALLEN, JW .

PHILOSOPHICAL MAGAZINE, 1959, 4 (45) :1046-1054

[2] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J].

BOOKER, GR ;

STICKLER, R .

BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09) :446-&

[3] ELECTRON MICROSCOPIC IMAGES OF SINGLE AND INTERSECTING STACKING FAULTS IN THICK FOILS .1. SINGLE FAULTS [J].

GEVERS, R ;

ART, A ;

AMELINCKX, S .

PHYSICA STATUS SOLIDI, 1963, 3 (09) :1563-1593

[4] STACKING-FAULT ENERGY AND IONICITY OF CUBIC-III-V COMPOUNDS [J].

GOTTSCHALK, H ;

PATZER, G ;

ALEXANDER, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01) :207-217

[5] ANOMALOUS ELECTRON ABSORPTION EFFECTS IN METAL FOILS - THEORY AND COMPARISON WITH EXPERIMENT [J].

HASHIMOTO, H ;

HOWIE, A ;

WHELAN, MJ .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 269 (1336) :80-&

[6] ELECTRON-MICROSCOPY OF MICROCRACKING ABOUT INDENTATIONS IN ALUMINUM-OXIDE AND SILICON-CARBIDE [J].

HOCKEY, BJ ;

LAWN, BR .

JOURNAL OF MATERIALS SCIENCE, 1975, 10 (08) :1275-1284

[7]

KAPPERT H, 1976, TR221989 IBM TECHN R, P48

[8] THE CHEMICAL POLISHING OF GALLIUM ARSENIDE IN BROMINE-METHANOL [J].

SULLIVAN, MV ;

KOLB, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :585-587