SCANNING LASER INFRARED MICROSCOPY OF DOPING INHOMOGENEITIES IN INAS SINGLE-CRYSTALS

被引：9

作者：

JUNGBLUTH, ED ^{[1
]}

BLACK, JF ^{[1
]}

机构：

[1] GTE LABS INC, WALTHAM, MA 02154 USA

来源：

SOLID STATE COMMUNICATIONS | 1973年 / 13卷 / 08期

关键词：

D O I：

10.1016/0038-1098(73)90542-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1099 / 1105

页数：7

共 10 条

[1] INFRARED TECHNIQUES FOR SEMICONDUCTOR CHARACTERIZATION [J].

BLACK, JF ;

LANNING, E ;

PERKOWITZ, S .

INFRARED PHYSICS, 1970, 10 (02) :125-+

[2] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

BURSTEIN, E .

PHYSICAL REVIEW, 1954, 93 (03) :632-633

[3] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1193-1195

[4] ANALYSIS OF IMPURITY DISTRIBUTION IN HOMOEPITAXIAL N ON N+ FILMS OF GAAS .2. [J].

DILORENZO, JV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (10) :1645-+

[5] OPTICAL PROPERTIES OF N-TYPE INDIUM ARSENIDE IN FUNDAMENTAL ABSORPTION EDGE REGION [J].

DIXON, JR ;

ELLIS, JM .

PHYSICAL REVIEW, 1961, 123 (05) :1560-&

[6] NON-DESTRUCTIVE DETERMINATION OF CARRIER CONCENTRATION IN EPITAXIAL SILICON USING A TOTAL INTERNAL REFLECTION TECHNIQUE [J].

GUPTA, DC .

SOLID-STATE ELECTRONICS, 1970, 13 (05) :543-&

[7] A REVIEW OF BULK AND PROCESS-INDUCED DEFECTS IN GAAS SEMICONDUCTORS [J].

JUNGBLUTH, ED .

METALLURGICAL TRANSACTIONS, 1970, 1 (03) :575-+

[8] SCANNED LASER INFRARED MICROSCOPE [J].

SHERMAN, B ;

BLACK, JF .

APPLIED OPTICS, 1970, 9 (04) :802-+

[9] PHOTOVOLTAIC EFFECT IN INAS [J].

TALLEY, RM ;

ENRIGHT, DP .

PHYSICAL REVIEW, 1954, 95 (04) :1092-1094

[10]

TANNENBAUM M, 1953, PHYS REV, V91, P1651

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