NON-DESTRUCTIVE DETERMINATION OF CARRIER CONCENTRATION IN EPITAXIAL SILICON USING A TOTAL INTERNAL REFLECTION TECHNIQUE

被引：11

作者：

GUPTA, DC

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 05期

关键词：

D O I：

10.1016/0038-1101(70)90135-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：543 / &

共 21 条

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[4] ON THE DETERMINATION OF OPTICAL CONSTANTS IN THE INFRARED BY ATTENUATED TOTAL REFLECTION [J].

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[5] MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIINS BY INFRARED PLASMA REFLECTION [J].

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[6]

GUPTA DC, 1968, SOLID STATE TECHNOL, V11, P31

[7] MEASUREMENT OF EPITAXIAL LAYER RESISTIVITY USING MOS CAPACITANCE METHOD [J].

GUPTA, DC ;

ANANTHA, NG .

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[8]

GUPTA DC, 1970, REV SCI INSTRUM, V41, P176

[9]

HANSEN WN, 1965, ISA T, V4, P263

[10]

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