DESIGN OF ENHANCED SCHOTTKY-BARRIER ALGAAS/GAAS MODFETS USING HIGHLY DOPED P+ SURFACE-LAYERS

被引：18

作者：

PRIDDY, KL

KITCHEN, DR

GRZYB, JA

LITTON, CW

HENDERSON, TS

PENG, CK

KOPP, WF

MORKOC, H

机构：

[1] USAF,INST TECHNOL,WRIGHT PATTERSON AFB,OH 45433

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期

关键词：

D O I：

10.1109/T-ED.1987.22904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：175 / 180

页数：6

共 12 条

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