LOW-NOISE MULTISTAGE AVALANCHE PHOTODETECTOR

被引：20

作者：

GORDON, JP

NAHORY, RE

POLLACK, MA

WORLOCK, JM

机构：

[1] Bell Telephone Laboratories, Holmdel

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 17期

关键词：

Avalanche photodiodes; Photodetectors;

D O I：

10.1049/el:19790374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a multistage compound semiconductor avalanche detector for low-noise amplification of photoelectronic signals. In this device, the junctions where amplification takes place are separated by heterojunctions, which act as traps for one species of charge carriers. We demonstrate by a calculation that such a structure will have a substantially improved signal/noise ratio. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：518 / 519

页数：2

共 8 条

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[6] IMPACT IONIZATION RATES FOR ELECTRONS AND HOLES IN GAAS-1-XSB-X ALLOYS
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[7] PEARSALL TP, 1977, 1976 S GAAS REL COMP, P331
[8] UNEQUAL ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS
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[J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 471 - 474

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