IMPACT IONIZATION RATES FOR ELECTRONS AND HOLES IN GAAS-1-XSB-X ALLOYS

被引：48

作者：

PEARSALL, TP ^{[1
]}

NAHORY, RE ^{[1
]}

POLLACK, MA ^{[1
]}

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 07期

关键词：

D O I：

10.1063/1.88776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：403 / 405

页数：3

共 10 条

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[2] HETEROJUNCTION III-V ALLOY PHOTODETECTORS FOR HIGH-SENSITIVITY 1.06-MUM OPTICAL RECEIVERS
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[J]. PROCEEDINGS OF THE IEEE, 1975, 63 (01) : 32 - 37
[3] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON
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[J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +
[4] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 164 - +
[5] LOW-THRESHOLD ROOM-TEMPERATURE DOUBLE-HETEROSTRUCTURE GAAS1-XSBX-ALYGA1-YAS1-XSBX INJECTION LASERS AT 1-MU-M WAVELENGTHS
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POLLACK, MA
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 562 - 564
[6] EFFICIENT GAAS1-XSBX-ALYGA1-YAS1-XSBX DOUBLE-HETEROSTRUCTURE LEDS IN 1-MUM WAVELENGTH REGION
NAHORY, RE
POLLACK, MA
BEEBE, ED
DEWINTER, JC
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 356 - 357
[7] PEARSALL TP, 1975, APPL PHYS LETT, V27, P329
[8] UNEQUAL ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS
STILLMAN, GE
WOLFE, CM
ROSSI, JA
FOYT, AG
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 471 - 474
[9] EFFECT OF AN ELECTRIC-FIELD ON IMPACT-IONIZATION PROBABILITY
TAKESHIMA, M
[J]. PHYSICAL REVIEW B, 1975, 12 (02): : 575 - 584
[10] USE OF A SCHOTTKY-BARRIER TO MEASURE IMPACT IONIZATION COEFFICIENTS IN SEMICONDUCTORS
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JOHNSON, WC
LAMPERT, MA
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 381 - 394

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