GROWTH OF INP WITH NOVEL IN-PRECURSORS AND P-PRECURSORS

This contribution presents the results of growth kinetic studies using trimethylindium-diisopropylamine adduct as an In precursor and isopropylphosphine as a group V source for the MOVPE (metalorganic vapor phase epitaxy) of InP. For comparison, experiments using the standard sources trimethylindium and PH3 and combinations of both approaches were also performed. From the dependence of the growth rate on temperature it can be concluded that specifically the use of the organic P source with TMI may lead to a pronounced reduction of the rate due to parasitic reactions involving both precursors. The coordinatively saturated adduct is a suitable reaction partner for the organic P precursor with respect to reducing prereactions. For all material combinations satisfactory electrical and luminescence properties of the InP layers were obtained.