NOVEL ORGANOMETALLIC STARTING MATERIALS FOR GROUP-III-V SEMICONDUCTOR METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引：21

作者：

HOSTALEK, M

POHL, L

BRAUERS, A

BALK, P

FRESE, V

HARDTDEGEN, H

HOVEL, R

REGEL, GK

MOLASSIOTI, A

MOSER, M

SCHOLZ, F

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER

[2] UNIV STUTTGART,INST PHYS 4,D-7000 STUTTGART 80,FED REP GER

来源：

THIN SOLID FILMS | 1989年 / 174卷

关键词：

D O I：

10.1016/0040-6090(89)90861-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1 / 4

页数：4

共 20 条

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[7] ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC [J].

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[8]

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[9] ORGANOMETALLIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLARSENIC AS ARSENIC SOURCE [J].

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[10]

JURKSCHAT K, 1984, J ORGANOMET CHEM, V272, pC13, DOI 10.1016/0022-328X(84)80450-7

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