ORGANOMETALLIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLARSENIC AS ARSENIC SOURCE

被引：23

作者：

FUJITA, S

UEMOTO, Y

ARAKI, S

IMAIZUMI, M

TAKEDA, Y

SASAKI, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 07期

关键词：

D O I：

10.1143/JJAP.27.1151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1151 / 1155

页数：5

共 12 条

[1] GROWTH OF HIGH-QUALITY GAAS USING TRIMETHYLGALLIUM AND DIETHYLARSINE
BHAT, R
KOZA, MA
SKROMME, BJ
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1194 - 1196
[2] USE OF TERTIARYBUTYLARSINE FOR GAAS GROWTH
CHEN, CH
LARSEN, CA
STRINGFELLOW, GB
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 218 - 220
[3] ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC
COOPER, CB
LUDOWISE, MJ
AEBI, V
MOON, RL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) : 299 - 309
[4] CUO CP, 1983, J CRYST GROWTH, V64, P461
[5] HALL-EFFECT, SCHOTTKY-BARRIER CAPACITANCE, AND PHOTOLUMINESCENCE SPECTRA MEASUREMENTS FOR GAAS EPITAXIAL LAYER AND THEIR CORRELATION
KATODA, T
SUGANO, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (08) : 1066 - 1073
[6] THE GROWTH AND CHARACTERIZATION OF UNIFORM GA1-XINXAS (X LESS-THAN-OR-EQUAL-TO .25) BY ORGANO-METALLIC VPE
LUDOWISE, MJ
COOPER, CB
SAXENA, RR
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) : 1051 - 1068
[7] USE OF TERTIARYBUTYLARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS
LUM, RM
KLINGERT, JK
LAMONT, MG
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (05) : 284 - 286
[8] RESIDUAL SHALLOW ACCEPTORS IN GAAS-LAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
ROTH, AP
CHARBONNEAU, S
GOODCHILD, RG
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5350 - 5357
[9] ALTERNATIVES TO ARSINE - THE ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS USING TRIETHYLARSENIC
SPECKMAN, DM
WENDT, JP
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 676 - 678
[10] ELECTRON-MOBILITY IN ALXGA1-XAS
STRINGFELLOW, GB
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4178 - 4183

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