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ORGANOMETALLIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLARSENIC AS ARSENIC SOURCE
被引:23
作者
:
FUJITA, S
论文数:
0
引用数:
0
h-index:
0
FUJITA, S
UEMOTO, Y
论文数:
0
引用数:
0
h-index:
0
UEMOTO, Y
ARAKI, S
论文数:
0
引用数:
0
h-index:
0
ARAKI, S
IMAIZUMI, M
论文数:
0
引用数:
0
h-index:
0
IMAIZUMI, M
TAKEDA, Y
论文数:
0
引用数:
0
h-index:
0
TAKEDA, Y
SASAKI, A
论文数:
0
引用数:
0
h-index:
0
SASAKI, A
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
1988年
/ 27卷
/ 07期
关键词
:
D O I
:
10.1143/JJAP.27.1151
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1151 / 1155
页数:5
相关论文
共 12 条
[1]
GROWTH OF HIGH-QUALITY GAAS USING TRIMETHYLGALLIUM AND DIETHYLARSINE
BHAT, R
论文数:
0
引用数:
0
h-index:
0
BHAT, R
KOZA, MA
论文数:
0
引用数:
0
h-index:
0
KOZA, MA
SKROMME, BJ
论文数:
0
引用数:
0
h-index:
0
SKROMME, BJ
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(17)
: 1194
-
1196
[2]
USE OF TERTIARYBUTYLARSINE FOR GAAS GROWTH
CHEN, CH
论文数:
0
引用数:
0
h-index:
0
CHEN, CH
LARSEN, CA
论文数:
0
引用数:
0
h-index:
0
LARSEN, CA
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(04)
: 218
-
220
[3]
ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC
COOPER, CB
论文数:
0
引用数:
0
h-index:
0
COOPER, CB
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
LUDOWISE, MJ
AEBI, V
论文数:
0
引用数:
0
h-index:
0
AEBI, V
MOON, RL
论文数:
0
引用数:
0
h-index:
0
MOON, RL
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(02)
: 299
-
309
[4]
CUO CP, 1983, J CRYST GROWTH, V64, P461
[5]
HALL-EFFECT, SCHOTTKY-BARRIER CAPACITANCE, AND PHOTOLUMINESCENCE SPECTRA MEASUREMENTS FOR GAAS EPITAXIAL LAYER AND THEIR CORRELATION
KATODA, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO,TOKYO,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO,TOKYO,JAPAN
KATODA, T
SUGANO, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO,TOKYO,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO,TOKYO,JAPAN
SUGANO, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(08)
: 1066
-
1073
[6]
THE GROWTH AND CHARACTERIZATION OF UNIFORM GA1-XINXAS (X LESS-THAN-OR-EQUAL-TO .25) BY ORGANO-METALLIC VPE
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
LUDOWISE, MJ
COOPER, CB
论文数:
0
引用数:
0
h-index:
0
COOPER, CB
SAXENA, RR
论文数:
0
引用数:
0
h-index:
0
SAXENA, RR
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1981,
10
(06)
: 1051
-
1068
[7]
USE OF TERTIARYBUTYLARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS
LUM, RM
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
LUM, RM
KLINGERT, JK
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
KLINGERT, JK
LAMONT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
LAMONT, MG
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(05)
: 284
-
286
[8]
RESIDUAL SHALLOW ACCEPTORS IN GAAS-LAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
ROTH, AP
论文数:
0
引用数:
0
h-index:
0
ROTH, AP
CHARBONNEAU, S
论文数:
0
引用数:
0
h-index:
0
CHARBONNEAU, S
GOODCHILD, RG
论文数:
0
引用数:
0
h-index:
0
GOODCHILD, RG
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(09)
: 5350
-
5357
[9]
ALTERNATIVES TO ARSINE - THE ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS USING TRIETHYLARSENIC
SPECKMAN, DM
论文数:
0
引用数:
0
h-index:
0
SPECKMAN, DM
WENDT, JP
论文数:
0
引用数:
0
h-index:
0
WENDT, JP
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(11)
: 676
-
678
[10]
ELECTRON-MOBILITY IN ALXGA1-XAS
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(06)
: 4178
-
4183
←
1
2
→
共 12 条
[1]
GROWTH OF HIGH-QUALITY GAAS USING TRIMETHYLGALLIUM AND DIETHYLARSINE
BHAT, R
论文数:
0
引用数:
0
h-index:
0
BHAT, R
KOZA, MA
论文数:
0
引用数:
0
h-index:
0
KOZA, MA
SKROMME, BJ
论文数:
0
引用数:
0
h-index:
0
SKROMME, BJ
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(17)
: 1194
-
1196
[2]
USE OF TERTIARYBUTYLARSINE FOR GAAS GROWTH
CHEN, CH
论文数:
0
引用数:
0
h-index:
0
CHEN, CH
LARSEN, CA
论文数:
0
引用数:
0
h-index:
0
LARSEN, CA
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(04)
: 218
-
220
[3]
ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC
COOPER, CB
论文数:
0
引用数:
0
h-index:
0
COOPER, CB
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
LUDOWISE, MJ
AEBI, V
论文数:
0
引用数:
0
h-index:
0
AEBI, V
MOON, RL
论文数:
0
引用数:
0
h-index:
0
MOON, RL
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(02)
: 299
-
309
[4]
CUO CP, 1983, J CRYST GROWTH, V64, P461
[5]
HALL-EFFECT, SCHOTTKY-BARRIER CAPACITANCE, AND PHOTOLUMINESCENCE SPECTRA MEASUREMENTS FOR GAAS EPITAXIAL LAYER AND THEIR CORRELATION
KATODA, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO,TOKYO,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO,TOKYO,JAPAN
KATODA, T
SUGANO, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO,TOKYO,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO,TOKYO,JAPAN
SUGANO, T
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(08)
: 1066
-
1073
[6]
THE GROWTH AND CHARACTERIZATION OF UNIFORM GA1-XINXAS (X LESS-THAN-OR-EQUAL-TO .25) BY ORGANO-METALLIC VPE
LUDOWISE, MJ
论文数:
0
引用数:
0
h-index:
0
LUDOWISE, MJ
COOPER, CB
论文数:
0
引用数:
0
h-index:
0
COOPER, CB
SAXENA, RR
论文数:
0
引用数:
0
h-index:
0
SAXENA, RR
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1981,
10
(06)
: 1051
-
1068
[7]
USE OF TERTIARYBUTYLARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS
LUM, RM
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
LUM, RM
KLINGERT, JK
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
KLINGERT, JK
LAMONT, MG
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
LAMONT, MG
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(05)
: 284
-
286
[8]
RESIDUAL SHALLOW ACCEPTORS IN GAAS-LAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
ROTH, AP
论文数:
0
引用数:
0
h-index:
0
ROTH, AP
CHARBONNEAU, S
论文数:
0
引用数:
0
h-index:
0
CHARBONNEAU, S
GOODCHILD, RG
论文数:
0
引用数:
0
h-index:
0
GOODCHILD, RG
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(09)
: 5350
-
5357
[9]
ALTERNATIVES TO ARSINE - THE ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS USING TRIETHYLARSENIC
SPECKMAN, DM
论文数:
0
引用数:
0
h-index:
0
SPECKMAN, DM
WENDT, JP
论文数:
0
引用数:
0
h-index:
0
WENDT, JP
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(11)
: 676
-
678
[10]
ELECTRON-MOBILITY IN ALXGA1-XAS
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
STRINGFELLOW, GB
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(06)
: 4178
-
4183
←
1
2
→