RESIDUAL SHALLOW ACCEPTORS IN GAAS-LAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

被引：39

作者：

ROTH, AP

CHARBONNEAU, S

GOODCHILD, RG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5350 / 5357

页数：8

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