BEHAVIOR OF ELECTRICALLY SMALL DEPLETION MODE MOSFETS AT LOW-TEMPERATURE

被引：12

作者：

GAENSSLEN, FH ^{[1
]}

JAEGER, RC ^{[1
]}

机构：

[1] AUBURN UNIV,DEPT ELECT ENGN,AUBURN,AL 36830

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 03期

关键词：

D O I：

10.1016/0038-1101(81)90084-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：215 / 220

页数：6

相关论文

共 5 条

[1] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J].

GAENSSLEN, FH ;

RIDEOUT, VL ;

WALKER, EJ ;

WALKER, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :218-229

[2] TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION MODE MOSFETS [J].

GAENSSLEN, FH ;

JAEGER, RC .

SOLID-STATE ELECTRONICS, 1979, 22 (04) :423-430

[3] SIMPLE ANALYTICAL MODELS FOR THE TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION-MODE DEVICES [J].

JAEGER, RC ;

GAENSSLEN, FH .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :423-430

[4] SIMPLE ANALYTICAL MODELS FOR THE TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION-MODE DEVICES [J].

JAEGER, RC ;

GAENSSLEN, FH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :501-508

[5] SIMULATION OF IMPURITY FREEZE-OUT THROUGH NUMERICAL-SOLUTION OF POISSONS-EQUATION WITH APPLICATION TO MOS DEVICE BEHAVIOR [J].

JAEGER, RC ;

GAENSSLEN, FH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) :914-920