ELECTRICAL-PROPERTIES OF COMPOSITE EVAPORATED SILICIDE POLYSILICON ELECTRODES

[1] BORDONARO D, 1979, J ELECTROCHEM SOC, V126, pC458

[2] CHOW TP, 1979, TECH DIGEST IEDM, P458

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[4] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424

[5] THERMAL OXIDATION OF POLYCRYSTALLINE SILICON FILMS [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (08): : 2292 - &

[6] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1431 - 1435

[7] MOCHIZUKI T, 1978, JPN J APPL PHYS S17, V6, P37

[8] MURARKA SP, 1979, TECH DIGEST IEDM, P454

[9] ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1377 - 1384

[10] ELASTIC STIFFNESS AND THERMAL-EXPANSION COEFFICIENTS OF VARIOUS REFRACTORY SILICIDES AND SILICON-NITRIDE FILMS [J]. THIN SOLID FILMS, 1980, 70 (02) : 241 - 247

[1] BORDONARO D, 1979, J ELECTROCHEM SOC, V126, pC458

[2] CHOW TP, 1979, TECH DIGEST IEDM, P458

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[4] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424

[5] THERMAL OXIDATION OF POLYCRYSTALLINE SILICON FILMS [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (08): : 2292 - &

[6] FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1431 - 1435

[7] MOCHIZUKI T, 1978, JPN J APPL PHYS S17, V6, P37

[8] MURARKA SP, 1979, TECH DIGEST IEDM, P454

[9] ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1377 - 1384

[10] ELASTIC STIFFNESS AND THERMAL-EXPANSION COEFFICIENTS OF VARIOUS REFRACTORY SILICIDES AND SILICON-NITRIDE FILMS [J]. THIN SOLID FILMS, 1980, 70 (02) : 241 - 247