ELASTIC STIFFNESS AND THERMAL-EXPANSION COEFFICIENTS OF VARIOUS REFRACTORY SILICIDES AND SILICON-NITRIDE FILMS

[1] BOLZ RE, 1973, HDB TABLES APPLIED E, P187

[2] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535

[3] THERMAL EXPANSION OF SPUTTERED SILICON NITRIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 864 - +

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[5] Green C. W., 1979, 17th Annual Proceedings Reliability Physics, P213, DOI 10.1109/IRPS.1979.362896

[6] HANSEN M, 1958, CONSTITUTION BINARY, P1203

[7] HIRAKI A, 1979, 1979 EL SOC M EXT AB, V79, P897

[8] Hoffman R. W., 1966, PHYS THIN FILMS, VVol. 3, pp. 211

[9] MATSUI H, 1976, 1976 EL SOC SPRING M, V76, P121

[10] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356

[1] BOLZ RE, 1973, HDB TABLES APPLIED E, P187

[2] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535

[3] THERMAL EXPANSION OF SPUTTERED SILICON NITRIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 864 - +

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[5] Green C. W., 1979, 17th Annual Proceedings Reliability Physics, P213, DOI 10.1109/IRPS.1979.362896

[6] HANSEN M, 1958, CONSTITUTION BINARY, P1203

[7] HIRAKI A, 1979, 1979 EL SOC M EXT AB, V79, P897

[8] Hoffman R. W., 1966, PHYS THIN FILMS, VVol. 3, pp. 211

[9] MATSUI H, 1976, 1976 EL SOC SPRING M, V76, P121

[10] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356