PHOTOEMISSION STUDIES OF INTERFACE BARRIER ENERGIES OF IRRADIATED MOS STRUCTURES

被引：9

作者：

PEEL, JL

KJAR, RA

EDEN, RC

机构：

来源：

关键词：

D O I：

10.1063/1.1653240

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3 / +

页数：1

共 10 条

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[2] PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE
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[3] PHOTOEMISSION OF ELECTRONS FROM N-TYPE DEGENERATE SILICON INTO SILICON DIOXIDE
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[4] A MODEL FOR RADIATION DAMAGE IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
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[5] Hughes H. L., 1964, ELECTRONICS, V37, P58
[6] KOOI E, 1965, PHILIPS RES REP, V20, P595
[7] RADIATION-INDUCED SPACE-CHARGE BUILDUP IN MOS STRUCTURES
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 764 - +
[8] EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07): : 1168 - +
[9] PHOTOEMISSION OF ELECTRONS FROM SILICON INTO SILICON DIOXIDE
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[J]. PHYSICAL REVIEW, 1965, 140 (2A): : A569 - &
[10] ZAININGER KH, 1967, RCA REV, V28, P208