X-RAY STANDING-WAVE AND TUNNELING-MICROSCOPE LOCATION OF GALLIUM ATOMS ON A SILICON SURFACE

被引：95

作者：

ZEGENHAGEN, J

PATEL, JR

FREELAND, P

CHEN, DM

GOLOVCHENKO, JA

BEDROSSIAN, P

NORTHRUP, JE

机构：

[1] ROWLAND INST SCI,CAMBRIDGE,MA 02142

[2] HARVARD UNIV,DEPT APPL SCI,CAMBRIDGE,MA 02138

[3] HARVARD UNIV,DEPT PHYS,CAMBRIDGE,MA 02138

[4] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.39.1298

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1298 / 1301

页数：4

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