ELECTRICAL-PROPERTIES OF BETA-SIC METAL-OXIDE-SEMICONDUCTOR STRUCTURES

Using conductance and capacitance data for metal-oxide-semiconductor (MOS) structures on n-type beta-SiC, the density of states at the beta-SiC/SiO2 interface, their location in the bandgap of beta-SiC, and the electron capture probability are obtained. The MOS structures were fabricated by oxidizing beta-SiC in wet oxygen. It is found that interface-state density of the order of 10(11) states/(cm2-eV) is located between 0.28-0.40 eV below the conduction-band edge of beta-SiC. The electron-capture probability is in the range from 4.2 x 10(-9) to 8.4 x 10(-8) cm3/s. This study shows that the electrical properties of beta-SiC MOS structures are similar to that of Si MOS structures.