EPITAXIAL-GROWTH OF BETA-SIC ON SI BY LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION

In this paper we report the growth of β-SiC films on Si(100) substrates by low-temperature chemical vapor deposition. Single crystals of β-SiC are grown at temperatures as low as 1150 °C. Low-temperature growth β-SiC is achieved using a SiH4-C3H8-H2-Ar gas system. The growth rate of films grown at 1150 °C is 1 μm/h. Transmission electron microscopy and x-ray diffraction results indicate that the β-SiC films grown at and above 1150 °C are single crystals. Films grown at temperatures lower than 1150 °C are polycrystalline. © 1990, Materials Research Society. All rights reserved.