EPITAXIAL-GROWTH OF 3C-SIC ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

[1] CHARACTERIZATION OF FAAS EPITAXIAL LAYERS BY LOW-PRESSURE MOVPE USING TEG AS GA SOURCE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 24 - 29

[2] DAIMON H, COMMUNICATION

[3] DAVIS RF, 1985, NCSU243043006 REP

[4] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[5] KANEDA S, 1983, EUR C ABSTR, P213

[6] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION FOR VERY LARGE-SCALE INTEGRATION PROCESSING - REVIEW [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 647 - 657

[7] LOW-TEMPERATURE EPITAXY OF BETA-SIC BY REACTIVE DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 26 - &

[8] MARSHALL RC, 1974, SILICON CARBIDE 1973, P123

[9] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 333 - +

[10] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[1] CHARACTERIZATION OF FAAS EPITAXIAL LAYERS BY LOW-PRESSURE MOVPE USING TEG AS GA SOURCE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 24 - 29

[2] DAIMON H, COMMUNICATION

[3] DAVIS RF, 1985, NCSU243043006 REP

[4] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[5] KANEDA S, 1983, EUR C ABSTR, P213

[6] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION FOR VERY LARGE-SCALE INTEGRATION PROCESSING - REVIEW [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 647 - 657

[7] LOW-TEMPERATURE EPITAXY OF BETA-SIC BY REACTIVE DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 26 - &

[8] MARSHALL RC, 1974, SILICON CARBIDE 1973, P123

[9] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 333 - +

[10] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462