EPITAXIAL-GROWTH OF BETA-SIC ON SI BY LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION

被引：32

作者：

CHAUDHRY, MI

WRIGHT, RL

机构：

[1] Department of Electrical and Computer Engineering, Clarkson University, Potsdam

来源：

JOURNAL OF MATERIALS RESEARCH | 1990年 / 5卷 / 08期

关键词：

D O I：

10.1557/JMR.1990.1595

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report the growth of β-SiC films on Si(100) substrates by low-temperature chemical vapor deposition. Single crystals of β-SiC are grown at temperatures as low as 1150 °C. Low-temperature growth β-SiC is achieved using a SiH4-C3H8-H2-Ar gas system. The growth rate of films grown at 1150 °C is 1 μm/h. Transmission electron microscopy and x-ray diffraction results indicate that the β-SiC films grown at and above 1150 °C are single crystals. Films grown at temperatures lower than 1150 °C are polycrystalline. © 1990, Materials Research Society. All rights reserved.

引用

页码：1595 / 1598

页数：4

共 14 条

[11] GROWTH AND CHARACTERIZATION OF CUBIC SIC SINGLE-CRYSTAL FILMS ON SI
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[12] INCLINED EPITAXY OF (411) BETA SILICON-CARBIDE ON (511) SILICON BY CHEMICAL VAPOR-DEPOSITION
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[14] 1985, SEMIANNUAL ANN PROGR

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