ISOTHERMAL VAPOR-PHASE EPITAXY OF HG1-X(CD1-YZNY)XTE THIN-FILMS USING SEMICLOSED OPEN-TUBE SYSTEM

被引:10
作者
ISSHIKI, M
MARUYAMA, Y
TOBE, S
机构
[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN
[2] TOHOKU UNIV,FAC ENGN,DEPT MAT SCI,SENDAI,MIYAGI 980,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 6A期
关键词
ISOTHERMAL VAPOR PHASE EPITAXY; HGCDTE; HGZNTE; HGCDZNTE; INTERDIFFUSION; MORPHOLOGY; SEMICLOSED OPEN TUBE; RESERVOIR;
D O I
10.1143/JJAP.31.1842
中图分类号
O59 [应用物理学];
学科分类号
摘要
Isothermal vapor phase epitaxy (ISOVPE) of Hg1-x(Cd1-yZny)xTe (MCZT) is performed at 723, 773 and 823 K using a HgTe source and Cd1-xZnxTe (CZT; x=0, 0.2 and 1) substrates. A weight loss of the source of more than 40% causes the melt of the substrate surface. Interdiffusions of Hg and Cd and/or Zn are clearly observed, and the layer thickness is proportional to the square root of the growth time. Thc surface morphology of the Hg1-xZnxTe (MZT) epitaxial layers is rough, and their thickness is not uniform, while the Hg1-xCdxTe (MCT) and MCZT grown using the CZT (x=0.2) substrates have good morphology and uniform thickness.
引用
收藏
页码:1842 / 1844
页数:3
相关论文
共 15 条
  • [1] ATTOLINI G, 1989, MATER LETT, V8, P131
  • [2] A MODIFIED APPROACH TO ISOTHERMAL GROWTH OF ULTRAHIGH QUALITY HGCDTE FOR INFRARED APPLICATIONS
    BECLA, P
    LAGOWSKI, J
    GATOS, HC
    RUDA, H
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1171 - 1173
  • [3] OPTIMIZATION OF ISOTHERMAL GROWTH OF HGCDTE LAYERS
    BECLA, P
    LAGOWSKI, J
    GATOS, HC
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1103 - 1105
  • [4] ISOTHERMAL GROWTH OF HGCDTE UNDER CONTROLLED HG VAPOR-PRESSURE
    BECLA, P
    LAGOWSKI, J
    GATOS, HC
    JEDRAL, L
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2855 - 2857
  • [5] <bold>Growth conditions and properties of ISOVPE Hg1-xCdxTe films</bold>
    DEMELO, O
    ATTOLINI, A
    LECCABUE, F
    PANIZZIERI, R
    PELOSI, C
    SALVIATI, G
    [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 98 (04) : 704 - 710
  • [6] ELECTRONIC-PROPERTIES OF HG1-X-YCDXZNYTE
    EKPENUMA, SN
    MYLES, CW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02): : 321 - 325
  • [7] CHARACTERIZATION OF ISOTHERMAL VAPOR-PHASE EPITAXIAL (HG, CD) TE
    LEE, SB
    MAGEL, LK
    TANG, MFS
    STEVENSON, DA
    TREGILGAS, JH
    GOODWIN, MW
    STRONG, RL
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 1098 - 1102
  • [8] LISHKA K, 1989, APPL PHYS LETT, V55, P1220
  • [9] OPEN-TUBE VAPOR TRANSPORT EPITAXY OF HGL-XCDXTE
    NEMIROVSKY, Y
    KEPTEN, A
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (06) : 867 - 895
  • [10] COMPOSITION AND THICKNESS CONTROL OF CDXHG1-XTE LAYERS GROWN BY OPEN TUBE ISOTHERMAL VAPOR-PHASE EPITAXY
    PIOTROWSKI, J
    DJURIC, Z
    GALUS, W
    JOVIC, V
    GRUDZIEN, M
    DJINOVIC, Z
    NOWAK, Z
    [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 83 (01) : 122 - 126