ISOTHERMAL VAPOR-PHASE EPITAXY OF HG1-X(CD1-YZNY)XTE THIN-FILMS USING SEMICLOSED OPEN-TUBE SYSTEM

被引：10

作者：

ISSHIKI, M

MARUYAMA, Y

TOBE, S

机构：

[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN

[2] TOHOKU UNIV,FAC ENGN,DEPT MAT SCI,SENDAI,MIYAGI 980,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 6A期

关键词：

ISOTHERMAL VAPOR PHASE EPITAXY; HGCDTE; HGZNTE; HGCDZNTE; INTERDIFFUSION; MORPHOLOGY; SEMICLOSED OPEN TUBE; RESERVOIR;

D O I：

10.1143/JJAP.31.1842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Isothermal vapor phase epitaxy (ISOVPE) of Hg1-x(Cd1-yZny)xTe (MCZT) is performed at 723, 773 and 823 K using a HgTe source and Cd1-xZnxTe (CZT; x=0, 0.2 and 1) substrates. A weight loss of the source of more than 40% causes the melt of the substrate surface. Interdiffusions of Hg and Cd and/or Zn are clearly observed, and the layer thickness is proportional to the square root of the growth time. Thc surface morphology of the Hg1-xZnxTe (MZT) epitaxial layers is rough, and their thickness is not uniform, while the Hg1-xCdxTe (MCT) and MCZT grown using the CZT (x=0.2) substrates have good morphology and uniform thickness.

引用

页码：1842 / 1844

页数：3

共 15 条

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