DIAMOND DEPOSITION USING A PLANAR RADIO-FREQUENCY INDUCTIVELY-COUPLED PLASMA

被引：14

作者：

BOZEMAN, SP

TUCKER, DA

STONER, BR

GLASS, JT

HOOKE, WM

机构：

[1] KOBE STEEL USA INC,CTR ELECTR MAT,RES TRIANGLE PK,NC 27709

[2] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27599

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 26期

关键词：

D O I：

10.1063/1.113793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A planar radio frequency inductively coupled plasma has been used to deposit diamond onto scratched silicon. This plasma source has been developed recently for use in large area semiconductor processing and holds promise as a method for scale up of diamond growth reactors. Deposition occurs in an annulus which coincides with the area of most intense optical emission from the plasma. Well-faceted diamond particles are produced when the substrate is immersed in the plasma.© 1995 American Institute of Physics.

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页码：3579 / 3581

页数：3

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