ANALYSIS OF THE ETCHING MECHANISMS OF TUNGSTEN IN FLUORINE-CONTAINING PLASMAS

Tungsten and polysilicon layers were etched in three different types of etching equipment, in different etching modes. Etch rates and wall profiles were determined. Partially etched tungsten layers were analyzed through Auger spectroscopy. Combining all these results, it was possible to determine the etch rate limiting subprocesses for tungsten etching. For most process conditions, the arrival of atomic fluorine at the wafer surface is the etch rate limiting mechanism. For other processes, the removal of products with low volatility is the limiting mechanism.