A SUBTHRESHOLD CONDUCTION MODEL FOR CIRCUIT SIMULATION OF SUBMICRON MOSFET

被引：8

作者：

CHAN, PC ^{[1
]}

LIU, R ^{[1
]}

LAU, SK ^{[1
]}

PINTOGUEDES, M ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,DIV INTEGRATED CIRCUITS,CUPERTINO,CA 95014

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1987年 / 6卷 / 04期

关键词：

D O I：

10.1109/TCAD.1987.1270304

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：574 / 581

页数：8

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