DEPTH PROFILING OF THE MINORITY-CARRIER DIFFUSION LENGTH IN INTRINSICALLY GETTERED SILICON BY ELECTRON-BEAM-INDUCED CURRENT

被引：17

作者：

DONOLATO, C ^{[1
]}

KITTLER, M ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST HALBLEITERPHYS,DDR-1200 FRANKFURT,GER DEM REP

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.339942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1569 / 1579

页数：11

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