COMPARISON OF EBIC AND DLTS MEASUREMENTS ON BORON-DOPED CZ SILICON CONTAMINATED WITH IRON

被引：17

作者：

KITTLER, M

SEIFERT, W

SCHMALZ, K

TITTELBACHHELMRICH, K

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 96卷 / 02期

关键词：

D O I：

10.1002/pssa.2210960247

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K133 / &

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Kittler M., 1985, 1st International Autumn School 1985: Gettering and Defect Engineering in the Semiconductor Technology (GADEST). Proceedings, P269

[4] DONATION CHARACTERISTICS OF IRON IN SILICON [J].

LEMKE, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01) :215-224

[5]

SCHMALZ K, UNPUB

WU, CJ ;

WITTRY, DB .