DOSE DEPENDENCE OF MOSSBAUER-SPECTRA OF ION-IMPLANTED CO-57 AND FE-57 IN SILICON

被引:10
作者
DAMGAARD, S [1 ]
PETERSEN, JW [1 ]
WEYER, G [1 ]
HOLCK, O [1 ]
机构
[1] NIELS BOHR INST,COPENHAGEN,DENMARK
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 58卷 / 02期
关键词
D O I
10.1002/pssa.2210580215
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:443 / 449
页数:7
相关论文
共 16 条
[11]   MOSSBAUER STUDY OF FE-57 IMPLANTED IN SILICON [J].
SAWICKI, JA ;
SAWICKA, BD ;
LAZARSKI, S ;
MAYDELLO.E .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 57 (02) :K143-K147
[12]  
WEXLER S, 1965, ACTIONS CHIMIQUES BI, V8, P103
[13]   COMPARISON OF MOSSBAUER-SPECTRA OF CO-57 IN SILICON FOR HIGH-TEMPERATURE ION-IMPLANTED AND FOR DIFFUSED SAMPLES [J].
WEYER, G ;
KETTSCHAU, A ;
GREBE, G ;
SCHROTER, W ;
BERGHOLZ, W .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (02) :459-466
[14]  
WEYER G, 1975, P INT C MOSSBAUER SP, V1, P213
[15]  
Weyer G, 1976, MOSSBAUER EFFECT MET, V10, P301
[16]  
WEYER G, 1976, J PHYSIQUE, V37, P893