NARROW-BEAM DIVERGENCE OF THE EMISSION FROM LOW-THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS

被引：10

作者：

ITAYA, Y

KATAYAMA, S

SUEMATSU, Y

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 04期

关键词：

Semiconductor junction lasers;

D O I：

10.1049/el:19790090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The angles of beam divergence perpendicular to the junction plane have been studied for low-threshold GalnAsP/lnP double-heterostructure lasers with a thin active layer emitting at 1.31 µm. The narrowest beam divergence obtained was 23° for a laser diode with an active-layer thickness of 0.05 µm. At an active-layer thickness of 0.13 µm, the beam divergence was 40µ with a threshold current density of 770 A/cm2.© 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：123 / 124

页数：2

共 8 条

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