GA-IN-AS SOLIDUS ISOTHERMS DEVELOPED BY THE STEP-GRADING TECHNIQUE

Liquidus and solidus data are given for the 650, 700, and 800 degree C isotherms in the In-rich corner of the Ga-In-As ternary system. The step-grading technique has been used to accommodate large lattice mismatch and thereby obtain extended solidus data up to 60% InAs. LPE has been used to grow eight successive step layers of Ga//1// minus //xIn//xAs on GaAs substrate material, and each one of these layers provides a solidus data point for this ternary. The present technique predicts the conditions for successful lattice matched growth of Ga//1// minus //xIn//xAs on InP substrates.