STRUCTURE OF THE (100)GAAS ON GAP INTERFACE

被引：7

作者：

GERTHSEN, D

PONCE, FA

ANDERSON, GB

CHUNG, HF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1310 / 1314

页数：5

共 11 条

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[5]

MATTHEWS JW, 1975, EPITAXIAL GROWTH B

[6]

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OKEEFE MA, 1979, 37TH P ANN EMSA M SA, P556

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OTSUKA, N ;

CHOI, C ;

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[9]

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[10] THE LOWER YIELD-POINT OF INP AND GAAS [J].

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