THEORY OF CONTINUOUSLY DISTRIBUTED TRAP STATES AT SI-SIO2 INTERFACES

[11] THEORY OF THE ELECTRONIC-STRUCTURE OF THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5733 - 5744

[12] EFFECT OF 2ND-NEAREST-NEIGHBOR FORCES ON VIBRATIONS OF AMORPHOUS SIO2 [J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2790 - 2792

[13] LAUGHLIN RB, 1978, PHYSICS SIO2 ITS INT, P321

[14] STRUCTURE OF VITREOUS SILICA [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1969, 2 : 164 - &

[15] ATOMIC DENSITIES OF STATES NEAR SI (111) SURFACES [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 750 - 760

[16] PANDEY KC, 1974, SOLID STATE COMMUN, V14, P459

[17] PANTELIDES WT, 1978, PHYSICS SIO2 ITS INT, P339

[18] OPTICAL TRANSITIONS IN CRYSTALLINE AND FUSED QUARTZ [J]. SOLID STATE COMMUNICATIONS, 1966, 4 (01) : 73 - &

[19] SCATTERING-THEORETIC APPROACH TO THE ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACES - (100) SURFACE OF TETRAHEDRAL SEMICONDUCTORS AND SIO2 [J]. PHYSICAL REVIEW B, 1978, 18 (10) : 5524 - 5544

[20] DETERMINATION OF INTERFACE-STATE DENSITY AND MOBILITY RATIO IN SILICON SURFACE INVERSION LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (10) : 892 - +

[11] THEORY OF THE ELECTRONIC-STRUCTURE OF THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5733 - 5744

[12] EFFECT OF 2ND-NEAREST-NEIGHBOR FORCES ON VIBRATIONS OF AMORPHOUS SIO2 [J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2790 - 2792

[13] LAUGHLIN RB, 1978, PHYSICS SIO2 ITS INT, P321

[14] STRUCTURE OF VITREOUS SILICA [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1969, 2 : 164 - &

[15] ATOMIC DENSITIES OF STATES NEAR SI (111) SURFACES [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 750 - 760

[16] PANDEY KC, 1974, SOLID STATE COMMUN, V14, P459

[17] PANTELIDES WT, 1978, PHYSICS SIO2 ITS INT, P339

[18] OPTICAL TRANSITIONS IN CRYSTALLINE AND FUSED QUARTZ [J]. SOLID STATE COMMUNICATIONS, 1966, 4 (01) : 73 - &

[19] SCATTERING-THEORETIC APPROACH TO THE ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACES - (100) SURFACE OF TETRAHEDRAL SEMICONDUCTORS AND SIO2 [J]. PHYSICAL REVIEW B, 1978, 18 (10) : 5524 - 5544

[20] DETERMINATION OF INTERFACE-STATE DENSITY AND MOBILITY RATIO IN SILICON SURFACE INVERSION LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (10) : 892 - +