DETERMINATION OF INTERFACE-STATE DENSITY AND MOBILITY RATIO IN SILICON SURFACE INVERSION LAYERS

被引：28

作者：

SAKAKI, H

HOH, K

SUGANO, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1970年 / ED17卷 / 10期

关键词：

D O I：

10.1109/T-ED.1970.17092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：892 / +

页数：1

相关论文

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