BEHAVIOR OF DISLOCATIONS IN SILICON SEMICONDUCTOR DEVICES - DIFFUSION ELECTRICAL

被引：29

作者：

LAWRENCE, JE

机构：

来源：

关键词：

D O I：

10.1149/1.2411449

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：860 / &

共 29 条

[1] BARDSLEY W, 1960, PROGRESS SEMICONDUCT, V4
[2] BERRY RS, PRIVATE COMMUNICATIO
[3] BRAGG WL, 1940, P PHYS SOC LOND, V52, P54
[4] Geometrical considerations concerning the structural irregularities to be assumed in a crystal
Burgers, JM
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY, 1940, 52 : 23 - 33
[5] ELECTRONIC STATES ON DISLOCATIONS IN SEMICONDUCTORS
CELLI, V
GOLD, A
THOMSON, R
[J]. PHYSICAL REVIEW LETTERS, 1962, 8 (03) : 96 - &
[6] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS
CHYNOWETH, AG
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110
[7] Cottrell A H, 1953, DISLOCATIONS PLASTIC, P134
[8] FLETCHER RC, 1953, PHYS REV, V92, P591
[9] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON
FULLER, CS
DITZENBERGER, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553
[10] GIBSON AF, 1960, PROGRESS SEMICOND ED, V4