COMPARISON OF ENERGY-BAND STRUCTURE OF GE-SI WITH THOSE OF SI AND GE

被引：24

作者：

STUKEL, DJ

机构：

来源：

PHYSICAL REVIEW B | 1971年 / 3卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.3.3347

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3347 / &

共 41 条

[1] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J].

BALSLEV, I .

PHYSICAL REVIEW, 1966, 143 (02) :636-&

[2] VALENCE BAND STRUCTURE OF GERMANIUM-SILICON ALLOYS [J].

BRAUNSTEIN, R .

PHYSICAL REVIEW, 1963, 130 (03) :869-&

[3] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J].

BRAUNSTEIN, R ;

MOORE, AR ;

HERMAN, F .

PHYSICAL REVIEW, 1958, 109 (03) :695-710

[4]

CARDONA M, 1960, J PHYS CHEM SOLIDS, V17, P138

[5] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE - INFRARED MEASUREMENTS [J].

CARDONA, M ;

SHAKLEE, KL ;

POLLAK, FH .

PHYSICS LETTERS, 1966, 23 (01) :37-&

[6] SPECTRAL ANALYSIS OF PHOTOEMISSIVE YIELDS IN SI GE GAAS GASB INAS AND INSB [J].

COHEN, ML ;

PHILLIPS, JC .

PHYSICAL REVIEW, 1965, 139 (3A) :A912-&

[7] SELF-CONSISTENT ORTHOGONALIZED-PLANE-WAVE BAND CALCULATION ON GAAS [J].

COLLINS, TC ;

STUKEL, DJ ;

EUWEMA, RN .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :724-&

[8] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J].

DISMUKES, JP ;

PAFF, RJ ;

EKSTROM, L .

JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) :3021-&

[9] CRYSTALLINE INTERPOLATION WITH APPLICATIONS TO BRILLOUIN-ZONE AVERAGES AND ENERGY-BAND INTERPOLATION [J].

EUWEMA, RN ;

STUKEL, DJ ;

COLLINS, TC ;

DEWITT, JS ;

SHANKLAND, DG .

PHYSICAL REVIEW, 1969, 178 (03) :1419-+

[10] ORTHOGONALIZED-PLANE-WAVE CONVERGENCE OF SOME TETRAHEDRAL SEMICONDUCTORS [J].

EUWEMA, RN ;

STUKEL, DJ .

PHYSICAL REVIEW B, 1970, 1 (12) :4692-&

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