ON THE FORMATION OF COPPER-RICH COPPER SILICIDES

被引:49
作者
STOLT, L
DHEURLE, FM
HARPER, JME
机构
[1] INST MICROELECTR,S-16421 KISTA,SWEDEN
[2] ROYAL INST TECHNOL,INST SOLID STATE ELECTR,S-16428 KISTA,SWEDEN
关键词
D O I
10.1016/0040-6090(91)90037-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The reaction of copper with silicon in Cu-Si bilayers with overall compositions between copper and the most silicon-rich compound Cu3Si, was monitored by means of several analytical tools, in situ resistance measurements during controlled heating, backscattering, and X-ray diffraction. The order of phase formation was established to be first eta" Cu3Si, followed by the formation of a phase called gamma, with about 17 at.% Si. With a sample of intermediate composition, one then observes the reaction of eta" with gamma, resulting in the formation of the epsilon phase with about 20 at.% Si. The resistivity of the various phases was estimated.
引用
收藏
页码:147 / 156
页数:10
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