GRAIN-BOUNDARY SCATTERING IN ALUMINUM-DOPED ZNO FILMS

被引：82

作者：

GHOSH, S

SARKAR, A

CHAUDHURI, S

PAL, AK

机构：

[1] Department of Materials Science, Indian Association for the Cultivation of Science, Calcutta

来源：

THIN SOLID FILMS | 1991年 / 205卷 / 01期

关键词：

D O I：

10.1016/0040-6090(91)90472-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical conductivity and Hall mobility of ZnO:Al films were measured in the temperature range 170-350 K. The effects of post-deposition heat treatment in vacuum and hydrogen atmosphere on the above properties were studied to derive meaningful information on the scattering mechanisms in these films. Grain boundary scattering was found to be the predominant mode of scattering at lower temperatures whereas the contribution from ionized impurities together with phonon scattering become significant at higher temperatures. The density Q(t) of trap states and its position was determined.

引用

页码：64 / 68

页数：5

共 27 条

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