TRIMMING CMOS SMART IMAGER WITH TUNNEL-EFFECT NONVOLATILE ANALOG MEMORY

被引：4

作者：

DEVOS, F ^{[1
]}

ZHANG, M ^{[1
]}

NI, Y ^{[1
]}

PONE, JF ^{[1
]}

机构：

[1] INST NATL TELECOMMUN,F-91011 EVRY,FRANCE

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 20期

关键词：

CMOS INTEGRATED CIRCUITS; IMAGE SENSORS; ANALOG STORAGE;

D O I：

10.1049/el:19931176

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amplified MOS imagers (AMIs) have the advantage of being compatible with conventional CMOS analogue/digital circuit design. One of the major problems in AMIs is their large fixed pattern noise compared to CCD imagers. The Letter presents the structure of a nonvolatile tunnel-effect analogue memory which is fully compatible with a standard CMOS process and which can reduce significantly the offset-like fixed pattern noise in AMI arrays.

引用

页码：1766 / 1767

页数：2

共 7 条

[1]

[Anonymous], 1989, ANALOG VLSI NEURAL S

[2]

GARDA P, 1988, TRAITEMENT SIGNAL, V5, P435

[3]

GLASSER LA, 1985, UV WRITE ENABLE PROM, P61

[4] DUAL POLARITY NONVOLATILE MOS ANALOG MEMORY (MAM) CELL FOR NEURAL TYPE CIRCUITRY [J].