DUAL POLARITY NONVOLATILE MOS ANALOG MEMORY (MAM) CELL FOR NEURAL TYPE CIRCUITRY

被引：6

作者：

SHIMABUKURO, RL

REEDY, RE

GARCIA, GA

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 19期

关键词：

D O I：

10.1049/el:19880837

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1231 / 1232

页数：2

共 8 条

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