DIFMOS - FLOATING-GATE ELECTRICALLY ERASABLE NONVOLATILE SEMICONDUCTOR MEMORY TECHNOLOGY

被引：11

作者：

GOSNEY, WM ^{[1
]}

机构：

[1] TEXAS INSTR INC,SEMICOND RES & ENGN LAB,DALLAS,TX 75222

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 05期

关键词：

D O I：

10.1109/T-ED.1977.18786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：594 / 599

页数：6

共 11 条

[1] AVALANCHE INJECTION INTO OXIDE IN SILICON GATE-CONTROLLED DEVICES .2. EXPERIMENTAL RESULTS [J].

BULUCEA, C .

SOLID-STATE ELECTRONICS, 1975, 18 (05) :381-391

[2] AVALANCHE INJECTION INTO OXIDE IN SILICON GATE-CONTROLLED DEVICES .1. THEORY [J].

BULUCEA, C .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :363-374

[3] EFFECTS OF INSULATOR THICKNESS FLUCTUATIONS ON MNOS CHARGE STORAGE CHARACTERISTICS [J].

CHOU, NJ ;

CROWDER, HP ;

HAMMER, R ;

ABOAF, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) :198-&

[4] MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE [J].

FROHMANB.D .

APPLIED PHYSICS LETTERS, 1971, 18 (08) :332-&

[5] ELECTRICALLY ALTERABLE AVALANCHE-INJECTION-TYPE MOS READ-ONLY MEMORY WITH STACKED-GATE STRUCTURE [J].

IIZUKA, H ;

MASUOKA, F ;

SATO, T ;

ISHIKAWA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) :379-387

[6]

LUNDSTROM I, 1972, IEEE T ELECTRON DEV, V19, P826

[7]

ROSS EC, 1969, RCA REV, V30, P366

[8] ELECTRICALLY REPROGRAMABLE NONVOLATILE SEMICONDUCTOR MEMORY [J].

TARUI, Y ;

NAGAI, K ;

HAYASHI, Y .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) :369-&

[9] ATMOS - ELECTRICALLY REPROGRAMMABLE READ-ONLY MEMORY DEVICE [J].

VERWEY, JF ;

KRAMER, RP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (10) :631-636

[10] HOLE CURRENTS IN THERMALLY GROWN SIO2 [J].

VERWEY, JF .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2273-&

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