EFFECTS OF INSULATOR THICKNESS FLUCTUATIONS ON MNOS CHARGE STORAGE CHARACTERISTICS

[1] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &

[2] Dorda G., 1970, Physica Status Solidi A, V1, P71, DOI 10.1002/pssa.19700010109

[3] FERRISPRABHU A, TO BE PUBLISHED

[4] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[5] GOETZBERGER A, 1966, APPL PHYS LETT, V9, P444

[6] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J]. APPLIED PHYSICS LETTERS, 1967, 10 (03) : 97 - &

[7] PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 693 - +

[8] KESHAVAN BV, 1968, OCT IEEE INT EL DEV

[9] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +

[10] MEMORY BEHAVIOR OF AN MNS CAPACITOR [J]. APPLIED PHYSICS LETTERS, 1968, 12 (08) : 260 - &

[1] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &

[2] Dorda G., 1970, Physica Status Solidi A, V1, P71, DOI 10.1002/pssa.19700010109

[3] FERRISPRABHU A, TO BE PUBLISHED

[4] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[5] GOETZBERGER A, 1966, APPL PHYS LETT, V9, P444

[6] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J]. APPLIED PHYSICS LETTERS, 1967, 10 (03) : 97 - &

[7] PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 693 - +

[8] KESHAVAN BV, 1968, OCT IEEE INT EL DEV

[9] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +

[10] MEMORY BEHAVIOR OF AN MNS CAPACITOR [J]. APPLIED PHYSICS LETTERS, 1968, 12 (08) : 260 - &