ATMOS - ELECTRICALLY REPROGRAMMABLE READ-ONLY MEMORY DEVICE

被引：20

作者：

VERWEY, JF ^{[1
]}

KRAMER, RP ^{[1
]}

机构：

[1] PHILIPS RES LABS, EINDHOVEN, NETHERLANDS

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 10期

关键词：

D O I：

10.1109/T-ED.1974.17981

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：631 / 636

页数：6

共 18 条

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[6]

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[7] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J].

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[8]

IIZUKA H, 1972, DEC INT EL DEV M

[9] PROPERTIES OF MNOS STRUCTURES [J].

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[10]

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