TRAP GENERATION AND OCCUPATION DYNAMICS IN SIO2 UNDER CHARGE INJECTION STRESS

被引：160

作者：

NISSANCOHEN, Y ^{[1
]}

SHAPPIR, J ^{[1
]}

FROHMANBENTCHKOWSKY, D ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,JERUSALEM,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.337204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2024 / 2035

页数：12

共 33 条

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