CLASSICAL-TRAJECTORY CALCULATIONS ON AR+ SPUTTERING OF A SI(001) SURFACE USING AN ABINITIO POTENTIAL

被引：46

作者：

STANSFIELD, RA

BROOMFIELD, K

CLARY, DC

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.39.7680

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7680 / 7696

页数：17

共 159 条

[1] PULSED MELTING OF SILICON (111) AND (100) SURFACES SIMULATED BY MOLECULAR-DYNAMICS [J].

ABRAHAM, FF ;

BROUGHTON, JQ .

PHYSICAL REVIEW LETTERS, 1986, 56 (07) :734-737

[2]

ABRAHAM FF, 1985, SURF SCI, V163, pL752, DOI 10.1016/0039-6028(85)91055-6

[3] BORN-MAYER-TYPE INTERATOMIC POTENTIAL FOR NEUTRAL GROUND-STATE ATOMS WITH Z = 2 TO Z = 105 [J].

ABRAHAMSON, AA .

PHYSICAL REVIEW, 1969, 178 (01) :76-+

[4]

Abramowitz M., 1965, HDB MATH FUNCTIONS

[5] EFFECT OF THE LATTICE MODEL ON THE DYNAMICS OF DISSOCIATIVE CHEMISORPTION OF H2 ON A SI(111) SURFACE [J].

AGRAWAL, PM ;

RAFF, LM ;

THOMPSON, DL .

SURFACE SCIENCE, 1987, 188 (03) :402-420

[6]

AMOS RD, 1984, CCP1844 DAR LAB SCI

[7]

ANDERSEN HH, 1981, TOP APPL PHYS, V47, pCH4

[8] LOW-ENERGY SPUTTERING YIELDS OF GE SINGLE CRYSTALS AS A FUNCTION OF TEMPERATURE [J].

ANDERSON, GS .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1607-&

[9] ATOM EJECTION STUDIES FOR SPUTTERING OF SEMICONDUCTORS [J].

ANDERSON, GS .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3455-&

[10] Interaction of the van der Waals type between three atoms [J].

Axilrod, BM ;

Teller, E .

JOURNAL OF CHEMICAL PHYSICS, 1943, 11 (06) :299-300

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