CLASSICAL-TRAJECTORY CALCULATIONS ON AR+ SPUTTERING OF A SI(001) SURFACE USING AN ABINITIO POTENTIAL

被引:46
作者
STANSFIELD, RA
BROOMFIELD, K
CLARY, DC
机构
来源
PHYSICAL REVIEW B | 1989年 / 39卷 / 11期
关键词
D O I
10.1103/PhysRevB.39.7680
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:7680 / 7696
页数:17
相关论文
共 159 条
[11]   ENERGY-SPECTRA OF SECONDARY IONS EMITTED DURING ION-BOMBARDMENT [J].
BAYLY, AR ;
MACDONALD, RJ .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 34 (04) :169-181
[12]   TOTAL ENERGY MINIMIZATION FOR SURFACES OF COVALENT SEMICONDUCTORS C, SI, GE, AND ALPHA-SN .2. (100)2X1 SURFACES [J].
BECHSTEDT, F ;
REICHARDT, D .
SURFACE SCIENCE, 1988, 202 (1-2) :83-98
[13]   DEVELOPMENTS IN SECONDARY ION MASS-SPECTROSCOPY AND APPLICATIONS TO SURFACE STUDIES [J].
BENNINGHOVEN, A .
SURFACE SCIENCE, 1975, 53 (DEC) :596-625
[14]   SIMS, EID AND FLASH-FILAMENT INVESTIGATION OF O-2, H-2, (O-2 + H-2) AND H2O INTERACTION WITH VANADIUM [J].
BENNINGHOVEN, A ;
MULLER, KH ;
PLOG, C ;
SCHEMMER, M ;
STEFFENS, P .
SURFACE SCIENCE, 1977, 63 (01) :403-416
[15]   REFINED UNIVERSAL POTENTIALS IN ATOMIC-COLLISIONS [J].
BIERSACK, JP ;
ZIEGLER, JF .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3) :93-100
[16]   INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J].
BISWAS, R ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2001-2004
[17]   NEW CLASSICAL-MODELS FOR SILICON STRUCTURAL ENERGIES [J].
BISWAS, R ;
HAMANN, DR .
PHYSICAL REVIEW B, 1987, 36 (12) :6434-6445
[18]   RANGE PARAMETER DISTORTION IN HEAVY-ION IMPLANTATION [J].
BLANK, P ;
WITTMAACK, K .
PHYSICS LETTERS A, 1975, 54 (01) :33-34
[19]   ENERGY AND FLUENCE DEPENDENCE OF THE SPUTTERING YIELD OF SILICON BOMBARDED WITH ARGON AND XENON [J].
BLANK, P ;
WITTMAACK, K .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1519-1528
[20]   DRY PROCESS TECHNOLOGY (REACTIVE ION ETCHING) [J].
BONDUR, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05) :1023-1029