CONDUCTION IN A-SIN-H AND A-SION-H ALLOYS

被引：7

作者：

OSENBACH, JW

KNOLLE, WR

ELIA, A

机构：

[1] AT&T BELL LABS,ALLENTOWN,PA 18103

[2] ELECTROTECH INC,HAUPPAUGE,NY 11788

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 11期

关键词：

D O I：

10.1149/1.2096462

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3409 / 3414

页数：6

共 17 条

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[7] THE STRUCTURE OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS DETERMINED BY INFRARED-SPECTROSCOPY [J].

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OSENBACH, JW .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1248-1254

[8]

KNOLLE WR, 1986, ELECTROCHEMICAL SOC, V862, P582

[9] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

LANFORD, WA ;

RAND, MJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477

[10] A MODEL DESCRIBING THE ELECTRICAL BEHAVIOR OF A-SIN-H ALLOYS [J].

OSENBACH, JW ;

KNOLLE, WR .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1408-1416

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