FLUORINATED THIN SIO2 GROWN BY RAPID THERMAL-PROCESSING

被引：8

作者：

TING, W

LO, GQ

HSIEH, TY

KWONG, DL

KUEHNE, J

MAGEE, CW

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265

[2] EVANS & INC,PLAINSBORO,NJ 08536

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 22期

关键词：

D O I：

10.1063/1.103190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality ultrathin fluorinated gate oxides have been grown for the first time by rapid thermal processing in diluted NF3 and O 2. The chemical and electrical properties of fluorinated oxides have been studied as a function of growth conditions.

引用

页码：2255 / 2257

页数：3

共 7 条

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