INTERSUBBAND ABSORPTION AND INFRARED PHOTODETECTION AT 3.5 AND 4.2 MU-M IN GAAS QUANTUM-WELLS

被引:92
作者
SCHNEIDER, H
FUCHS, F
DISCHLER, B
RALSTON, JD
KOIDL, P
机构
[1] Fraunhofer-Institut für Angewandte Festkörperphysik, 7800 Freiburg
关键词
D O I
10.1063/1.104936
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose and demonstrate a novel concept for intersubband detectors at operating wavelengths of 3-5-mu-m using GaAs quantum wells. An extremely large intersubband spacing is obtained by using ultrathin AlAs barriers on either side of the GaAs quantum wells followed by a thicker Al0.3Ga0.7As layer. Simultaneously, the confining AlAs layers act as tunnel barriers which allow an electrical detection of the intersubband excitation.
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页码:2234 / 2236
页数:3
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