POLYSILICON STRAIN-GAUGE TRANSDUCERS

被引：8

作者：

GRIDCHIN, VA

LUBIMSKYI, VM

SARINA, MP

机构：

[1] Department of Applied Physics, Novosibirsk Institute of Electrical Engineering, Novosibirsk

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1992年 / 30卷 / 03期

关键词：

D O I：

10.1016/0924-4247(92)80124-L

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strain-gauge transducers with polysilicon resistors can be used successfully in various sensors. They have some advantages in comparison to monocrystalline silicon strain-gauge transducers. However, not enough information is available for the qualitative design of such transducers. The theoretical principles of the temperature dependence of the output signal for a constant supply voltage and constant supply current are described. A polysilicon strain-gauge transducer with a square diaphragm fabricated on the discussed principles is reported. It has an operating temperature range of -190- + 300-degrees-C, and weak temperature dependence of the output signal.

引用

页码：219 / 223

页数：5

共 7 条

[1] POLYCRYSTALLINE SILICON-ON-METAL STRAIN-GAUGE TRANSDUCERS [J].