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GENERATION OF MISFIT DISLOCATIONS IN SEMICONDUCTORS
被引:435
作者
:
MAREE, PMJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
MAREE, PMJ
BARBOUR, JC
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
BARBOUR, JC
VANDERVEEN, JF
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
VANDERVEEN, JF
KAVANAGH, KL
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
KAVANAGH, KL
BULLELIEUWMA, CWT
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
BULLELIEUWMA, CWT
VIEGERS, MPA
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
VIEGERS, MPA
机构
:
[1]
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
[2]
PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
来源
:
JOURNAL OF APPLIED PHYSICS
|
1987年
/ 62卷
/ 11期
关键词
:
D O I
:
10.1063/1.339078
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:4413 / 4420
页数:8
相关论文
共 32 条
[31]
DIFFUSION-INDUCED DISLOCATIONS IN SILICON
WASHBURN, J
论文数:
0
引用数:
0
h-index:
0
WASHBURN, J
THOMAS, G
论文数:
0
引用数:
0
h-index:
0
THOMAS, G
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(06)
: 1909
-
&
[32]
SILICON MOLECULAR-BEAM EPITAXY ON GALLIUM-ARSENIDE
ZALM, PC
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
ZALM, PC
MAREE, PMJ
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
MAREE, PMJ
OLTHOF, RIJ
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
OLTHOF, RIJ
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(06)
: 597
-
599
←
1
2
3
4
→
共 32 条
[31]
DIFFUSION-INDUCED DISLOCATIONS IN SILICON
WASHBURN, J
论文数:
0
引用数:
0
h-index:
0
WASHBURN, J
THOMAS, G
论文数:
0
引用数:
0
h-index:
0
THOMAS, G
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(06)
: 1909
-
&
[32]
SILICON MOLECULAR-BEAM EPITAXY ON GALLIUM-ARSENIDE
ZALM, PC
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
ZALM, PC
MAREE, PMJ
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
MAREE, PMJ
OLTHOF, RIJ
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
OLTHOF, RIJ
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(06)
: 597
-
599
←
1
2
3
4
→